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S6025L Triacs Sensitive Gate Power Mosfet Transistor SCRs 1-70 AMPS NON-SENSITIVE GATE

Anterwell Technology Ltd.

S6025L Triacs Sensitive Gate Power Mosfet Transistor SCRs 1-70 AMPS NON-SENSITIVE GATE

Brand Name : Anterwell

Model Number : S6025L

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Operating temperature range(TO-92 ) : -65 °C to +125 °C

Operating temperature range(all other packages) : -40 °C to +125 °C

Storage temperature range(TO-92 ) : -65 °C to +150 °C

Lead solder temperature : 230 °C

voltage capability : 200 V to 1000 V

surge capability : 950 A

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SCRs (1 A to 70 A)

General Description

The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges are required, see “Sensitive SCRs” section of this catalog.

Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques.

The Teccor line of SCRs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor’s glass offers a rugged, reliable barrier against junction contamination.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

Features

• RoHS Compliant

• Electrically-isolated package

• High voltage capability — 200 V to 1000 V

• High surge capability — up to 950 A

• Glass-passivated chip

Compak SCR

• Surface mount package — 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

Specific Test Conditions

di/dt — Maximum rate-of-rise of on-state current; IGT = 150 mA with ≤ 0.1 µs rise time

dv/dt — Critical rate of applied forward voltage

I 2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing

IDRM and IRRM — Peak off-state forward and reverse current at VDRM and VRRM

Igt — dc gate trigger current; VD = 12 V dc; RL = 60 Ω for 1 to 16 A devices and 30 Ω for 20 to 70 A devices

IGM — Peak gate current

IH — dc holding current; gate open

IT — Maximum on-state current

ITSM — Peak one-cycle forward surge current

PG(AV) — Average gate power dissipation

PGM — Peak gate power dissipation

tgt — Gate controlled turn-on time; gate pulse = 100 mA; minimum width = 15 µs with rise time ≤ 0.1 µs

tq — Circuit commutated turn-off time

VDRM and VRRM — Repetitive peak off-state forward and reverse voltage

Vgt — DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω for 1 to 16 A devices and 30 Ω for 20 to 70 A devices

VTM — Peak on-state voltage at maximum rated RMS current

General Notes

• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.

• Operating temperature range (TJ) is -65 °C to +125 °C for TO-92 devices and -40 °C to +125 °C for all other packages.

• Storage temperature range (TS) is -65 °C to +150 °C for TO-92 devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and -40 °C to +125 °C for all others.

• Lead solder temperature is a maximum of 230 °C for 10 seconds maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (TC) is measured as shown on dimensional outline drawings in the “Package Dimensions” sectionof this catalog.

S6025L Triacs Sensitive Gate Power Mosfet Transistor SCRs 1-70 AMPS NON-SENSITIVE GATE

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